High-performance GaN MOSFET with high-κ LaAlO 3/SiO 2 gate dielectric

Chung-Yong Tsai*, T. L. Wu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

73 Scopus citations


Using a high-κ LaAlO 3/SiO 2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (V t) of 0.1 V, low on-resistance (R on) of 13.5 Ω mm, high breakdown voltage of 385 V, high transconductance (g m) of 136 mS/mm, and record-best normalized drive current (μ C ox) of 172 μA/V 2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-κ gate dielectric and recessed-gate etching.

Original languageEnglish
Article number6087370
Pages (from-to)35-37
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - 1 Jan 2012


  • GaN
  • high κ
  • LaAlO

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