High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

H. W. Huang; Hao-Chung Kuo; C. F. Lai; C. E. Lee; C. W. Chiu; Tien-chang Lu; S. C. Wang; C. H. Lin; K. M. Leung

doi:10.1109/LPT.2007.893829

High-performance GaN-based vertical-injection light-emitting diodes with TiO₂-SiO₂ omnidirectional reflector and n-GaN roughness

H. W. Huang^*, Hao-Chung Kuo, C. F. Lai, C. E. Lee, C. W. Chiu, Tien-chang Lu, S. C. Wang, C. H. Lin, K. M. Leung

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO ₂ -SiO ₂ omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO ₂ -SiO ₂ ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

Original language	English
Article number	4137558
Pages (from-to)	565-567
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2007.893829
State	Published - 15 Apr 2007

Keywords

Flip-chip
Light-emitting diode (LED)
Omnidirectional reflector (ODR)

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10.1109/LPT.2007.893829

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title = "High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness",

abstract = " We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO 2 -SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO 2 -SiO 2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.",

keywords = "Flip-chip, Light-emitting diode (LED), Omnidirectional reflector (ODR)",

author = "Huang, {H. W.} and Hao-Chung Kuo and Lai, {C. F.} and Lee, {C. E.} and Chiu, {C. W.} and Tien-chang Lu and Wang, {S. C.} and Lin, {C. H.} and Leung, {K. M.}",

year = "2007",

month = apr,

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doi = "10.1109/LPT.2007.893829",

language = "English",

volume = "19",

pages = "565--567",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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High-performance GaN-based vertical-injection light-emitting diodes with TiO₂-SiO₂ omnidirectional reflector and n-GaN roughness. / Huang, H. W.; Kuo, Hao-Chung; Lai, C. F.; Lee, C. E.; Chiu, C. W.; Lu, Tien-chang; Wang, S. C.; Lin, C. H.; Leung, K. M.

In: IEEE Photonics Technology Letters, Vol. 19, No. 8, 4137558, 15.04.2007, p. 565-567.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

AU - Huang, H. W.

AU - Kuo, Hao-Chung

AU - Lai, C. F.

AU - Lee, C. E.

AU - Chiu, C. W.

AU - Lu, Tien-chang

AU - Wang, S. C.

AU - Lin, C. H.

AU - Leung, K. M.

PY - 2007/4/15

Y1 - 2007/4/15

N2 - We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO 2 -SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO 2 -SiO 2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

AB - We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO 2 -SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO 2 -SiO 2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

KW - Flip-chip

KW - Light-emitting diode (LED)

KW - Omnidirectional reflector (ODR)

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