High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

H. W. Huang*, Hao-Chung Kuo, C. F. Lai, C. E. Lee, C. W. Chiu, Tien-chang Lu, S. C. Wang, C. H. Lin, K. M. Leung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO 2 -SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO 2 -SiO 2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

Original languageEnglish
Article number4137558
Pages (from-to)565-567
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
StatePublished - 15 Apr 2007


  • Flip-chip
  • Light-emitting diode (LED)
  • Omnidirectional reflector (ODR)

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