High performance GaInP/GaAs HBT radio frequency integrated circuits at 5 GHz

Chin-Chun Meng*, Tzung Han Wu, Mingchi Lin, Ching Hung Chen, Jhih Ci Jhong, Yu Wen Chang, Sheng Che Tseng, Bo Chen Tsou, Da Wei Sung, S. K. Hsu, M. H. Chiang, Shey Shi Lu, Hsiao Chin Chen, Ming Chou Chiang, Shih An Yu, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Several high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFICs) implemented by our research group are reviewed in this paper. These demonstarted RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual feedback wideband amplifiers, broad band Gilbert down-conversion micromixer, Gilbert down-conversion mixers with poly-phase filters for image rejection, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs. In addition, a method to extract the GaInP/GaAs HBT device structure is also developed.

Original languageEnglish
Title of host publicationAPMC 2005
Subtitle of host publicationAsia-Pacific Microwave Conference Proceedings 2005
DOIs
StatePublished - 1 Dec 2005
EventAPMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
Duration: 4 Dec 20057 Dec 2005

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

ConferenceAPMC 2005: Asia-Pacific Microwave Conference 2005
CountryChina
CitySuzhou
Period4/12/057/12/05

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