High performance deep-submicron n-MOSFETs by nitrogen implantation and in-situ HF vapor clean

Jiann Heng Chen, Tan Fu Lei, Chia Lin Chen, Tien-Sheng Chao, Wen Ying Wen, Kuag Ting Chen

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This study demonstrates a high performance and reliable deep-submicron n-MOSFETs with ultra-thin gate oxide prepared by combining with nitrogen gate electrode implantation and native-oxide-free in-situ HF vapor pre-oxidation cleaning. Our results indicate that the performance and reliability, including the leakage current of ultra-thin gate oxide, the drain current (Id), transconductance (Gm), charge pumping current (Icp), stress induce leakage current (SILC), and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides are all significantly improved.

Original languageEnglish
Pages (from-to)180-185
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 2000

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