This study demonstrates a high performance and reliable deep-submicron n-MOSFETs with ultra-thin gate oxide prepared by combining with nitrogen gate electrode implantation and native-oxide-free in-situ HF vapor pre-oxidation cleaning. Our results indicate that the performance and reliability, including the leakage current of ultra-thin gate oxide, the drain current (Id), transconductance (Gm), charge pumping current (Icp), stress induce leakage current (SILC), and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides are all significantly improved.
|Number of pages||6|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 2000|