High performance Cu-doped SiO2 ReRAM by a novel chemical soak method

Fun Tat Chin*, Wen Luh Yang, Tien-Sheng Chao, Yuan Ming Chang, Li Min Lin, Sheng Hsien Liu, Chia Hsiung Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO 2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO 2 film and effectively improve the reliability of the conventional Cu-doped SiO 2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (∼10 6), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO 2 ReRAM device.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages469-473
Number of pages5
Edition3
DOIs
StatePublished - 1 Dec 2011
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 10 Oct 201112 Oct 2011

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1112/10/11

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