High performance CPW and microstrip ring resonators on silicon substrates

C. C. Chen*, B. F. Hung, Albert Chin, S. P. McAlister

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

High performance CPW and novel microstrip ring resonators at ∼30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton-implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electro-magnetic simulations, were measured. In contrast, the ring resonators on VLSI-standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits.

Original languageEnglish
Pages (from-to)511-514
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume42
Issue number6
DOIs
StatePublished - 20 Sep 2004

Keywords

  • CPW
  • RF
  • Ring resonators
  • Si
  • VLSI

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