High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Y. J. Lee, T. C. Hong, F. K. Hsueh, P. J. Sung, C. Y. Chen, S. S. Chuang, T. C. Cho, S. Noda, Y. C. Tsou, K. H. Kao, C. T. Wu, T. Y. Yu, Y. L. Jian, C. J. Su, Y. M. Huang, W. H. Huang, B. Y. Chen, M. C. Chen, K. P. Huang, J. Y. LiM. J. Chen, Y. Li, S. Samukawa, W. F. Wu, G. W. Huang, J. M. Shieh, T. Y. Tseng, T. S. Chao, Y. H. Wang, W. K. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) Ion and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high Ion/Ioff ratio and low subthreshold swing (S.S. ∼ 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages33.5.1-33.5.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - 31 Jan 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period3/12/167/12/16

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