High-performance charge-trapping flash memory device with an ultrathin 2.5-nm equivalent-Si 3N 4-thickness trapping layer

Chung-Yong Tsai*, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We made the MoN-[SiO 2-LaAlO 3]-[Ge-HfON]-[LaAlO 3-SiO 2]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si 3N 4-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 °C, and a 3.6-V endurance window at 10 6 cycles, under very fast 100 μs and low ± 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.

Original languageEnglish
Article number6078413
Pages (from-to)252-254
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume59
Issue number1
DOIs
StatePublished - 1 Jan 2012

Keywords

  • Charge-trapping (CT) Flash
  • Ge
  • HfON
  • LaAlO
  • nonvolatile memory (NVM)

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