Microstrip transmission lines with very low power loss of 0.4 dB/mm at 50 GHz have been fabricated on Si substrates using an optimized ion-implantation process. These devices have the inherent advantages of smaller chip size and better power performance than CPW lines. Using the same approach, high-performance thin-film microstrip lines are also developed, showing a loss of 0.9 dB/mm at 20 GHz. This approach is compatible with existing VLSI backend layout technology.
- Ion implantation
- Microstrip lines