High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates

C. C. Chen*, B. F. Hung, Albert Chin, S. P. McAlister

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Microstrip transmission lines with very low power loss of 0.4 dB/mm at 50 GHz have been fabricated on Si substrates using an optimized ion-implantation process. These devices have the inherent advantages of smaller chip size and better power performance than CPW lines. Using the same approach, high-performance thin-film microstrip lines are also developed, showing a loss of 0.9 dB/mm at 20 GHz. This approach is compatible with existing VLSI backend layout technology.

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume43
Issue number2
DOIs
StatePublished - 20 Oct 2004

Keywords

  • CPW
  • Ion implantation
  • Microstrip lines
  • Si
  • Thin-film
  • VLSI

Fingerprint Dive into the research topics of 'High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates'. Together they form a unique fingerprint.

Cite this