High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

Ming Jui Yang*, Chao-Hsin Chien, Yi Hsien Lu, Guang Li Luo, Su Ching Chiu, Chun Che Lou, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiO x) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiO x gate dielectric exhibit excellent device performance in terms of higher I ON/I OFF current ratio, lower subthreshold swing, and lower threshold voltage (V th albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiO x gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO 2 gate dielectric.

Original languageEnglish
Pages (from-to)902-904
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number10
DOIs
StatePublished - 1 Oct 2007

Keywords

  • Hafnium silicate (HfSiO )
  • High dielectric constant (high-κ)
  • Polycrystalline-silicon thin-film transistors (poly-Si TFTs)

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