In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiO x) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiO x gate dielectric exhibit excellent device performance in terms of higher I ON/I OFF current ratio, lower subthreshold swing, and lower threshold voltage (V th albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiO x gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO 2 gate dielectric.
- Hafnium silicate (HfSiO )
- High dielectric constant (high-κ)
- Polycrystalline-silicon thin-film transistors (poly-Si TFTs)