High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation

Po-Tsun Liu, Po Yi Kuo, Shan Ming Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WCb)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-K HfC2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage ~-0.072 V, high field-effect mobility (p.re) ~ 23.8 cnvW-s, excellent subthreshold swing ~ 72.6 mV/dec, low voltage operation (low power consumption), high electrical reliability, and small hysteresis.

Original languageEnglish
Title of host publicationECS Transactions
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages91-93
Number of pages3
Volume86
Edition11
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2018
EventSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 30 Sep 20184 Oct 2018

Publication series

NameECS Transactions
Number11
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period30/09/184/10/18

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