High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer

Shun Cheng Hsu*, Dong Sing Wuu, Xinhe Zheng, Ray-Hua Horng, Juh Yuh Su

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

An alternative heavily carbon-doped GaP (GaP:C) contact layer is demonstrated to form a good ohmic contact to electron-beam-evaporation indium-tin oxide (ITO) spreading layer on the AlGaInP light-emitting diode (LED) with a GaAs absorbing substrate. The LEDs with GaP:C/ITO contact layer provide a substantial improvement in light output power over conventional structures (without GaP:C/ITO). The AlGaInP LEDs with GaP:C/ITO structures exhibited a higher external quantum efficiency (3.24%) and larger light output power (5.9 mW) under a dc operation of 160mA than those of 2.01% and 1.93 mW at 120mA for the conventional structures, showing an earlier saturation behavior of current-power characteristics. These positive results are tentatively attributed to the introduction of the GaP:C/ITO current-spreading structures in the LEDs.

Original languageEnglish
Pages (from-to)7023-7025
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number9 PART 1
DOIs
StatePublished - 12 Sep 2008

Keywords

  • AlGaInP
  • GaP contact layer
  • Indium-tin oxide (ITO)
  • Light-emitting diode (LED)

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