High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu*, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Rustagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

34 Scopus citations

Abstract

In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

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