High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu; Shi Jin Ding; H. F. Lim; Chunxiang Zhu; M. F. Li; S. J. Kim; X. F. Yu; J. H. Chen; Y. F. Yong; Byung Jin Cho; D. S.H. Chan; Subhash C. Rustagi; M. B. Yu; C. H. Tung; Anyan Du; Doan My; P. D. Foo; Albert Chin; Dim Lee Kwong

High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu^*, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Rustagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

34 Scopus citations

Abstract

In this paper, high performance ALD HfO ₂-Al ₂O ₃ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm ² from 10 kHz to 20 GHz, low leakage current of 7.45×10 ^-9 A/cm ²@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO ₂-Al ₂O ₃ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1 Dec 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 8 Dec 2003 → 10 Dec 2003

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Hu, H., Ding, S. J., Lim, H. F., Zhu, C., Li, M. F., Kim, S. J., Yu, X. F., Chen, J. H., Yong, Y. F., Cho, B. J., Chan, D. S. H., Rustagi, S. C., Yu, M. B., Tung, C. H., Du, A., My, D., Foo, P. D., Chin, A., & Kwong, D. L. (2003). High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting, 379-382.

Hu, Hang ; Ding, Shi Jin ; Lim, H. F. ; Zhu, Chunxiang ; Li, M. F. ; Kim, S. J. ; Yu, X. F. ; Chen, J. H. ; Yong, Y. F. ; Cho, Byung Jin ; Chan, D. S.H. ; Rustagi, Subhash C. ; Yu, M. B. ; Tung, C. H. ; Du, Anyan ; My, Doan ; Foo, P. D. ; Chin, Albert ; Kwong, Dim Lee. / High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications. In: Technical Digest - International Electron Devices Meeting. 2003 ; pp. 379-382.

@article{cef85930291f48298da3696df98778df,

title = "High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications",

abstract = "In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.",

author = "Hang Hu and Ding, {Shi Jin} and Lim, {H. F.} and Chunxiang Zhu and Li, {M. F.} and Kim, {S. J.} and Yu, {X. F.} and Chen, {J. H.} and Yong, {Y. F.} and Cho, {Byung Jin} and Chan, {D. S.H.} and Rustagi, {Subhash C.} and Yu, {M. B.} and Tung, {C. H.} and Anyan Du and Doan My and Foo, {P. D.} and Albert Chin and Kwong, {Dim Lee}",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "379--382",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 08-12-2003 Through 10-12-2003",

}

High Performance ALD HfO ₂-Al ₂O ₃ Laminate MIM Capacitors for RF and Mixed Signal IC Applications. / Hu, Hang; Ding, Shi Jin; Lim, H. F.; Zhu, Chunxiang; Li, M. F.; Kim, S. J.; Yu, X. F.; Chen, J. H.; Yong, Y. F.; Cho, Byung Jin; Chan, D. S.H.; Rustagi, Subhash C.; Yu, M. B.; Tung, C. H.; Du, Anyan; My, Doan; Foo, P. D.; Chin, Albert; Kwong, Dim Lee.

In: Technical Digest - International Electron Devices Meeting, 01.12.2003, p. 379-382.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

AU - Hu, Hang

AU - Ding, Shi Jin

AU - Lim, H. F.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Kim, S. J.

AU - Yu, X. F.

AU - Chen, J. H.

AU - Yong, Y. F.

AU - Cho, Byung Jin

AU - Chan, D. S.H.

AU - Rustagi, Subhash C.

AU - Yu, M. B.

AU - Tung, C. H.

AU - Du, Anyan

AU - My, Doan

AU - Foo, P. D.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

AB - In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

UR - http://www.scopus.com/inward/record.url?scp=17644439382&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17644439382

SP - 379

EP - 382

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 8 December 2003 through 10 December 2003

ER -