High performance 40-GHz bandpass filters on Si using proton implantation

K. T. Chan, C. Y. Chen, Albert Chin, J. C. Hsieh, J. Liu, T. S. Duh, W. J. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a very simple process to fabricate high performance filters on Si at 40 GHz using H + implantation. The filter has only -3.4 dB loss at peak transmission of 40 GHz with a broad 9 GHz bandwidth, which are the best filter results on Si at mm-wave frequency. In sharp contrast, the filter on 1.5 μm SiO 2 isolated Si has much worse transmission and reflection loss and failed for circuit application.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages69-70
Number of pages2
ISBN (Electronic)0780373170
DOIs
StatePublished - 1 Jan 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 24 Jun 200226 Jun 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Conference

Conference60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period24/06/0226/06/02

Keywords

  • Band pass filters
  • Bandwidth
  • Circuits
  • Conductivity
  • Gallium arsenide
  • Performance loss
  • Propagation losses
  • Protons
  • Radio frequency
  • Reflection

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  • Cite this

    Chan, K. T., Chen, C. Y., Chin, A., Hsieh, J. C., Liu, J., Duh, T. S., & Lin, W. J. (2002). High performance 40-GHz bandpass filters on Si using proton implantation. In 60th Device Research Conference, DRC 2002 (pp. 69-70). [1029517] (Device Research Conference - Conference Digest, DRC; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2002.1029517