@inproceedings{661d9daa196b484994d684ad31b6044f,
title = "High performance 40-GHz bandpass filters on Si using proton implantation",
abstract = " We report a very simple process to fabricate high performance filters on Si at 40 GHz using H + implantation. The filter has only -3.4 dB loss at peak transmission of 40 GHz with a broad 9 GHz bandwidth, which are the best filter results on Si at mm-wave frequency. In sharp contrast, the filter on 1.5 μm SiO 2 isolated Si has much worse transmission and reflection loss and failed for circuit application. ",
keywords = "Band pass filters, Bandwidth, Circuits, Conductivity, Gallium arsenide, Performance loss, Propagation losses, Protons, Radio frequency, Reflection",
author = "Chan, {K. T.} and Chen, {C. Y.} and Albert Chin and Hsieh, {J. C.} and J. Liu and Duh, {T. S.} and Lin, {W. J.}",
year = "2002",
month = jan,
day = "1",
doi = "10.1109/DRC.2002.1029517",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "69--70",
booktitle = "60th Device Research Conference, DRC 2002",
address = "United States",
note = "null ; Conference date: 24-06-2002 Through 26-06-2002",
}