High performance 0.1 μm PD SOI tunneling-biased MOSFETs (TBMOS)

Kuo Nan Yang*, Yi Lin Chan, Yu Lin Chu, Hou Yu Chen, Fu Liang Yang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

This paper for the first time proposes a new structure of partially-depleted SOI MOSFETs- Tunneling-Biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (∼66 mV/dec), and > 15 % increase in ID,SAT. TBMOS also has better hot carrier immunity than body grounded device.

Original languageEnglish
Pages (from-to)934-936
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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