This paper for the first time proposes a new structure of partially-depleted SOI MOSFETs- Tunneling-Biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (∼66 mV/dec), and > 15 % increase in ID,SAT. TBMOS also has better hot carrier immunity than body grounded device.
|Number of pages||3|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2001|
|Event||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
Duration: 2 Dec 2001 → 5 Dec 2001