High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

Sun Jay Chang, Chun Yen Chang, Tien-Sheng Chao, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low Vth simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

Original languageEnglish
Pages (from-to)127-129
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number3
DOIs
StatePublished - 1 Mar 2000

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