High-peak-power subnanosecond diode-pumped passively Q-switched microchip laser

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Abstract

Diode-pumped passively Q-switched solid-state laser with extremely short high-peak-power pulses are of potential interest for numerous applications. In this paper we present a resonator that is formed by a coated c-cut Nd:GdVO 4 or Nd:YVO4 crystal and a coated Cr/sup 4+/:YAG crystal. The studies of the present performance indicate that c-cut Nd:GdVO4 and Nd:YVO4 crystal are very convenient material for short pulse (sub-nanosecond) and high-peak power lasers. It is demonstrated that at 2 W pump power, 17.8 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13 kHz can be generated in the c-cut Nd:GdVO4 and 18 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13.5 kHz at 2.4 W pump power in the c-cut Nd:YVO4.

Original languageEnglish
Title of host publication2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003
Number of pages1
DOIs
StatePublished - 1 Dec 2003
Event2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003 - Munich, Germany
Duration: 22 Jun 200327 Jun 2003

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest

Conference

Conference2003 Conference on Lasers and Electro-Optics Europe, CLEO/EUROPE 2003
CountryGermany
CityMunich
Period22/06/0327/06/03

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