High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells

Haocheng Wu, Heng Li, Shiou-Yi Kuo, Bo-Yan Chen, Tien-Chang Lu, Huamao Huang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Green resonant-cavity light-emitting diode (RCLED) has great potential in optical communication but suffers low efficiency. In this study, GaN-based flip-chip green RCLED incorporated with nitrogen face-oriented inclination asymmetric trapezoidal quantum wells (NOAT-QWs) is proposed to enhance the light-output power (LOP). Samples with NOAT-QWs and normal symmetric square quantum wells (SS-QWs) were fabricated and characterized. Although their electrical characteristics and emission spectra are similar, the LOP and emission efficiency are significantly improved. At a driving current of 450 mA, the improvement of LOP for RCLED with NOAT-QWs can be as high as 1.44 times in comparison to the sample with SS-QWs. The unprecedented high output power of 115 mW and the narrow full-width-at-half-maximum (FWHM) of 6.4 nm in the emission spectrum give great potential in optical communication. The inherent mechanism was investigated by the finite element analysis, from which the simulation results match well with the experimental measurements. The simulation results reveal that the NOAT-QWs are beneficial in alleviating the quantum confined stark effect and facilitating easier hole carriers' flow across the barriers, leading to more electron-hole wave function overlaps and higher radiative recombination rate.

Original languageEnglish
Article number9145812
Pages (from-to)3650-3654
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number9
DOIs
StatePublished - Sep 2020

Keywords

  • GaN
  • green light-emitting diode (LED)
  • resonant cavity light-emitting diode (RCLED)
  • trapezoidal quantum wells (TQWs)

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