High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays

Ya Ju Lee*, Shawn Yu Lin, Ching Hua Chiu, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert

*Corresponding author for this work

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Abstract

Here we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm-2. More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.

Original languageEnglish
Article number141111
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
StatePublished - 17 Apr 2009

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    Lee, Y. J., Lin, S. Y., Chiu, C. H., Lu, T-C., Kuo, H-C., Wang, S. C., Chhajed, S., Kim, J. K., & Schubert, E. F. (2009). High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays. Applied Physics Letters, 94(14), [141111]. https://doi.org/10.1063/1.3119192