High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer

Hsiao-Wen Zan*, Yuan Hsuan Hsu, Hsin-Fei Meng, Chian Hao Huang, Yu Tai Tao, Wu Wei Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We present a promising solution-processed vertical transistor which exhibits high output current, high on/off current ratio, and low operation voltage. Numerous poly(3-hexylthiophene) vertical channels are embedded in vertical nanometer pores. Treating the sidewalls of pores by self-assemble monolayer with long alkyl chains enhances the pore-filling and inter-chain order of poly(3-hexylthiophene). The channel current is therefore greatly increased. A grid metal inside the porous template controls the channel potential profile to turn on and turn off the vertical transistor. Finally, the transistor delivers an output current density as 50-110 mA/cm 2 at 2 V with an on/off current ratio larger than 10 000.

Original languageEnglish
Article number093307
JournalApplied Physics Letters
Volume101
Issue number9
DOIs
StatePublished - 27 Aug 2012

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