High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Yudan Wang*, Facai Wu, Xingqiang Liu, Jun Lin, Jui Yuan Chen, Wen Wei Wu, Jingsong Wei, Yuan Liu, Qi Liu, Lei Liao

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The scaling down of switching media encounters high leakage current in the traditional oxide material based memristors, resulting in high power consumption of chips. Two-dimensional (2D) materials promise an ultimate device scaling down to atomic layer thickness. Herein, black phosphorus (BP) and its self-assembly phosphorous oxide (BP) memristors are constructed, which leverages the high on/off ratio operation of oxides and low leakage current of 2D materials with high performance. The memristors exhibit reproducible and reliable switching characteristics with the on/off ratio >107 and data retention >104 s. Depending on the high reproducibility, basic "AND" and "OR" gates have been constructed on flexible substrates. Moreover, on the basis of the symmetry and linearity of conductance in the devices, the neural network simulation for supervised learning presents an online learning accuracy of 91.4%. This work opens an avenue for future flexible electronics.

Original languageEnglish
Article number193503
JournalApplied Physics Letters
Volume115
Issue number19
DOIs
StatePublished - 4 Nov 2019

Fingerprint Dive into the research topics of 'High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer'. Together they form a unique fingerprint.

  • Cite this

    Wang, Y., Wu, F., Liu, X., Lin, J., Chen, J. Y., Wu, W. W., Wei, J., Liu, Y., Liu, Q., & Liao, L. (2019). High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer. Applied Physics Letters, 115(19), [193503]. https://doi.org/10.1063/1.5115531