High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

Ang Sheng Chou, Pin Chun Shen, Chao Ching Cheng, Li Syuan Lu, Wei Chen Chueh, Ming Yang Li, Gregory Pitner, Wen Hao Chang, Chih I. Wu, Jing Kong, Lain Jong Li, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

Original languageEnglish
Title of host publication2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728164601
DOIs
StatePublished - Jun 2020
Event2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States
Duration: 16 Jun 202019 Jun 2020

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2020-June
ISSN (Print)0743-1562

Conference

Conference2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
CountryUnited States
CityHonolulu
Period16/06/2019/06/20

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