High mobility tungsten-doped thin-film transistor on polyimide substrate with low temperature process

Dun Bao Ruan, Po-Tsun Liu*, Yu Chuan Chiu, Min Chin Yu, Kai Jhih Gan, Ta Chun Chien, Po Yi Kuo, Simon M. Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A novel high mobility channel material, amorphous tungsten doped indium-oxide, is used as the active layer of flexible TFT, which is fabricated on a transparent polyimide under a low temperature process. The effects of channel thickness are investigated as well in this work. The flexible TFT with a suitable thickness of IWO film shows a high carrier mobility and low sub-threshold swing. The improvement can be attributed to increased donor-like oxygen vacancy with the thickness of channel layer increased.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
DOIs
StatePublished - May 2018
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 7 May 20189 May 2018

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period7/05/189/05/18

Keywords

  • IWO
  • Polyimide
  • TFT

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