High mobility SnO2 TFT for display and future IC

Albert Chin, Cheng Wei Shih, Chun Fu Lu, Wei Fang Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Very high mobility of 149∼189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages294-297
Number of pages4
ISBN (Electronic)9784990875312
DOIs
StatePublished - 15 Aug 2016
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: 6 Jul 20168 Jul 2016

Publication series

NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period6/07/168/07/16

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