High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao, Mu Chun Niu, Hsiao-Wen Zan*, Hsin-Fei Meng, Ming Che Ku

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalOrganic Electronics
Volume12
Issue number1
DOIs
StatePublished - 1 Jan 2011

Keywords

  • Space-charge-limited current
  • Vertical transistor

Fingerprint Dive into the research topics of 'High-mobility polymer space-charge-limited transistor with grid-induced crystallinity'. Together they form a unique fingerprint.

Cite this