High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Yen Chun Fu*, William Hsu, Yen Ting Chen, Huang Siang Lan, Cheng Han Lee, Hung Chih Chang, Hou Yun Lee, Guang Li Luo, Chao-Hsin Chien, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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    Fu, Y. C., Hsu, W., Chen, Y. T., Lan, H. S., Lee, C. H., Chang, H. C., Lee, H. Y., Luo, G. L., Chien, C-H., Liu, C. W., Hu, C-M., & Yang, F. L. (2010). High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703388] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703388