High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-kappa Gate Dielectrics

Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng, Po Chun Chen, Yu Chien Chiu, Ping Chiou, Chin Pao Cheng

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-kappa SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 +/- 006 V, a low sub-threshold swing of 110 +/- 6 mV/decade and an extremely high mobility of 60.2 +/- 32 cm(2)/V s. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.
Original languageEnglish
JournalIEEE/OSA Journal of Display Technology
Volume10
Issue number10
DOIs
StatePublished - Oct 2014

Keywords

  • Flexible; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); room temperature
  • ZINC-OXIDE; DISPLAYS; STRESS

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