This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-kappa SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 +/- 006 V, a low sub-threshold swing of 110 +/- 6 mV/decade and an extremely high mobility of 60.2 +/- 32 cm(2)/V s. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.
- Flexible; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); room temperature
- ZINC-OXIDE; DISPLAYS; STRESS
Hsu, H-H., Chang, C-Y., Cheng, C-H., Chen, P. C., Chiu, Y. C., Chiou, P., & Cheng, C. P. (2014). High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-kappa Gate Dielectrics. IEEE/OSA Journal of Display Technology, 10(10). https://doi.org/10.1109/JDT.2014.2331351