High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng, Shan Haw Chiou, Chiung Hui Huang

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
Original languageEnglish
Pages (from-to)87-89
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
StatePublished - Jan 2014

Keywords

  • TiO2; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); mobility; gettering
  • ZINC-OXIDE; SEMICONDUCTOR

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