High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

Xiongfei Yu*, Chunxiang Zhu, X. P. Wang, M. F. Li, Albert Chin, A. Y. Du, W. D. Wang, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

26 Scopus citations

Abstract

In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO 2 films, significant improvements were achieved in contrast to pure HfO 2: (1) the dielectric crystallization temperature is increased up to 1000°C; (2) interface states density (D it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G m variations under constant voltage stress (CVS).

Original languageEnglish
Pages (from-to)110-111
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Oct 2004
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 15 Jun 200417 Jun 2004

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