High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

Xiongfei Yu; Chunxiang Zhu; X. P. Wang; M. F. Li; Albert Chin; A. Y. Du; W. D. Wang; Dim Lee Kwong

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

Xiongfei Yu^*, Chunxiang Zhu, X. P. Wang, M. F. Li, Albert Chin, A. Y. Du, W. D. Wang, Dim Lee Kwong

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO ₂ films, significant improvements were achieved in contrast to pure HfO ₂: (1) the dielectric crystallization temperature is increased up to 1000°C; (2) interface states density (D _it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G _m variations under constant voltage stress (CVS).

Original language	English
Pages (from-to)	110-111
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
State	Published - 1 Oct 2004
Event	2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States Duration: 15 Jun 2004 → 17 Jun 2004

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@article{b07b380aa6964c32bfae3d09d4e9a4d5,

title = "High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric",

abstract = "In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO 2 films, significant improvements were achieved in contrast to pure HfO 2: (1) the dielectric crystallization temperature is increased up to 1000°C; (2) interface states density (D it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G m variations under constant voltage stress (CVS).",

author = "Xiongfei Yu and Chunxiang Zhu and Wang, {X. P.} and Li, {M. F.} and Albert Chin and Du, {A. Y.} and Wang, {W. D.} and Kwong, {Dim Lee}",

year = "2004",

month = oct,

day = "1",

language = "English",

pages = "110--111",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 15-06-2004 Through 17-06-2004",

}

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric. / Yu, Xiongfei; Zhu, Chunxiang; Wang, X. P.; Li, M. F.; Chin, Albert; Du, A. Y.; Wang, W. D.; Kwong, Dim Lee.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.10.2004, p. 110-111.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

AU - Yu, Xiongfei

AU - Zhu, Chunxiang

AU - Wang, X. P.

AU - Li, M. F.

AU - Chin, Albert

AU - Du, A. Y.

AU - Wang, W. D.

AU - Kwong, Dim Lee

PY - 2004/10/1

Y1 - 2004/10/1

N2 - In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO 2 films, significant improvements were achieved in contrast to pure HfO 2: (1) the dielectric crystallization temperature is increased up to 1000°C; (2) interface states density (D it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G m variations under constant voltage stress (CVS).

AB - In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO 2 films, significant improvements were achieved in contrast to pure HfO 2: (1) the dielectric crystallization temperature is increased up to 1000°C; (2) interface states density (D it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G m variations under constant voltage stress (CVS).

UR - http://www.scopus.com/inward/record.url?scp=4544326575&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:4544326575

SP - 110

EP - 111

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 15 June 2004 through 17 June 2004

ER -

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

Abstract

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