High linear voltage references for on-chip CMOS temperature sensor

Joseph Tzuo Sheng Tsai, Her-Ming Chiueh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

High linear voltage reference circuitry is designed and implemented in TSMC 0.13μm and 0.18μm CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in conventional PTAT (proportional to absolute temperature) circuits. However, such solutions often have linearity problem in high temperature region due to the current leaking devices in modern deep sub micron and nano-scale CMOS technology. The proposed circuit utilized temperature complementation technique on two voltage references, PTAT and IOAT (independent of absolute temperature) references, to enhance the linearity and produce a more stable IOAT voltage reference. Base on the simulation results, the R-squares of both circuitries are better than 0.999 in a considerable wider temperature range from -55°C to 170°C. Thus, a fully integrated temperature sensor with wider temperature range is designed and easily to integrate to modern system-on-chip designs with minimal efforts.

Original languageEnglish
Title of host publicationICECS 2006 - 13th IEEE International Conference on Electronics, Circuits and Systems
Pages216-219
Number of pages4
DOIs
StatePublished - 1 Dec 2006
EventICECS 2006 - 13th IEEE International Conference on Electronics, Circuits and Systems - Nice, France
Duration: 10 Dec 200613 Dec 2006

Publication series

NameProceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Conference

ConferenceICECS 2006 - 13th IEEE International Conference on Electronics, Circuits and Systems
CountryFrance
CityNice
Period10/12/0613/12/06

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