High-linear-power mesfet devices using source-degeneration inductance and input-impedance mismatch

Chin-Chun Meng*, W. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with via-hole ground and with bond-wire ground are used to investigate the effect of source-inductive feedback and input-impedance mismatch on the effect of linearity. At 2.4 GHz, the device without bond-wire ground and mismatched input impedance has the highest linearity OIP 3 = 50 dBm, gain = 13.5 dB gain, and P 1 dB = 29 dBm, while the device with via-hole ground and matched input impedance has the lowest linearity OIP 3 = 40 dBm, 18.3 dB gain, and P 1dB = 29 dBm.

Original languageEnglish
Pages (from-to)953-954
Number of pages2
JournalMicrowave and Optical Technology Letters
Volume48
Issue number5
DOIs
StatePublished - 1 May 2006

Keywords

  • GaAs
  • Intermodulation
  • Linearity
  • MESFET
  • Power amplifier

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