High-K evolution: Subnanometer EOT challenges and future perspectives for scaling

H. Wong, J. Zhang, H. Iwai, K. Kakushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The use of high-k (HiK) dielectrics has enabled further downsizing of CMOS devices, towards the nanoscale range. However, the gate oxide scaling, in the sense of equivalent oxide thickness (EOT), has already lost its momentum. In the subnanometer EOT, or for a couple nanometer physical thickness, most HiK materials fail to maintain their superior electrical properties. In addition, the related interface layers (HiK/silicon substrate and HiK/metal gate) are not directly scalable. They limit the smallest achievable EOT and govern some of the device properties such as channel mobility, subthreshold conduction, etc. This work highlights the major challenges coming across with the EOT scaling in the subnanometer range. Some future perspectives such as the use of alternative gate electrode materials and crystalline HiK for interface control will also be discussed.

Original languageEnglish
Title of host publicationECS Transactions
EditorsK. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, M. Tao
PublisherElectrochemical Society Inc.
Pages81-96
Number of pages16
Edition4
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2017
Event10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States
Duration: 1 Oct 20175 Oct 2017

Publication series

NameECS Transactions
Number4
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period1/10/175/10/17

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    Wong, H., Zhang, J., Iwai, H., & Kakushima, K. (2017). High-K evolution: Subnanometer EOT challenges and future perspectives for scaling. In K. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, & M. Tao (Eds.), ECS Transactions (4 ed., pp. 81-96). (ECS Transactions; Vol. 80, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08004.0081ecst