High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target

Kun Ching Shen*, Tzu Yu Wang, Dong Sing Wuu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

Original languageEnglish
Pages (from-to)15149-15156
Number of pages8
JournalOptics Express
Volume20
Issue number14
DOIs
StatePublished - 2 Jul 2012

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