High hole mobility of Al2O3 MOSFETSs on dislocation free Ge-on-Insulator wafers

Albert Chin*, D. S. Yu, C. H. Wu, C. H. Huang, W. J. Chen

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The much degraded mobility, high-κ dielectric crystallization, and EOT reduction after processing are the primary limitations of high-κ gate dielectric MOSFETs. We have fabricated the high-κ Al2O 3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm2/Vs at Eeff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O 3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (≤500°C) can also avoid high-κ dielectric crystallization and EOT reduction by O2 or moisture penetration through high-κ dielectric.

Original languageEnglish
Pages363-371
Number of pages9
StatePublished - 1 Dec 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: 12 Oct 200316 Oct 2003

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
CountryUnited States
CityOrlando, FL.
Period12/10/0316/10/03

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    Chin, A., Yu, D. S., Wu, C. H., Huang, C. H., & Chen, W. J. (2003). High hole mobility of Al2O3 MOSFETSs on dislocation free Ge-on-Insulator wafers. 363-371. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.