High-gain, low-voltage BEOL logic gate inverter built with film profile engineered IGZO transistors

Rong Jhe Lyu, Yun Hsuan Chiu, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We demonstrate InGaZnO (IGZO) TFTs with channel-length (L) tunable Vth for high-gain BEOL logic gate inverters in a unique film-profile engineering (FPE) approach. In this FPE scheme the thickness and film profile of gate oxide and IGZO active layer are directly tailored by L (0.4-0.8 μm) in a single step, leading to a wide-ranging tunability in Vth of-0.2-+1.6V at no expense of additional masks and process steps. This provides an effective degree of freedom in the layout design for the realization of area-saving, high-gain unipolar logic inverters with load-Transistors. Record-high voltage gain of 112 is demonstrated from the unipolar logic inverter with depletion-load 0.4 μm IGZO TFT and 0.7μm IGZO drive-Transistor, respectively, at operation voltage (Vdd) of 9V.

Original languageEnglish
Title of host publication2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467394789
DOIs
StatePublished - 27 May 2016
EventInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan
Duration: 25 Apr 201627 Apr 2016

Publication series

Name2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

ConferenceInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
CountryTaiwan
CityHsinchu
Period25/04/1627/04/16

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    Lyu, R. J., Chiu, Y. H., Lin, H-C., Li, P-W., & Huang, T. Y. (2016). High-gain, low-voltage BEOL logic gate inverter built with film profile engineered IGZO transistors. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 [7480534] (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2016.7480534