High-gain high-isolation CMFB stacked-lo subharmonic gilbert mixer using SiGe BiCMOS technology

T. H. Wu*, Chin-Chun Meng, G. W. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A 5.2-GHz SiOe BiCMOS stacked-LO-stage CMFB (common mode feedback) subharmonic mixer is demonstrated in this article. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and - 78 dB 2LO-RF isolation.

Original languageEnglish
Pages (from-to)1214-1216
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume49
Issue number5
DOIs
StatePublished - 1 May 2007

Keywords

  • 2LO-RF isolation
  • Gilbert mixer
  • SiGe heterojunction bipolar transistor (HBT)
  • Stacked-LO-stage
  • Subharmonic mixer

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