High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors

Po-Tsun Liu*, Yi Teh Chou, Li Feng Teng, Chur Shyang Fuh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm2/V s and hole mobility of 0.15 cm2 /V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications.

Original languageEnglish
Article number083505
JournalApplied Physics Letters
Issue number8
StatePublished - 23 Aug 2010

Fingerprint Dive into the research topics of 'High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors'. Together they form a unique fingerprint.

Cite this