High frequency property optimization of heterojunction bipolar transistors using geometric programming

Yi-Ming Li*, Ying Chieh Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we theoretically optimize the high frequency property of silicon-germanium heterojunction bipolar transistors (HBTs) using a geometry programming (GP) technique. It is known that the base transit time of semiconductor devices potentially is a function of doping profile, device geometry and materials which significantly dominate the high frequency property of HBTs. To maximize the cut-off frequency of HBTs, the subject is formulated as a GP optimization problem by physically considering the base transit time as an object function. The GP model is solved numerically so that the cutoff frequency of HBT could be optimized for specified upper and lower bounds of the base doping concentration, and certain Ge composition. This work also shows that for 13% Ge profile, the cut-off frequency may reach a maximal value.

Original languageEnglish
Title of host publicationComputation in Modern Science and Engineering - Proceedings of the International Conference on Computational Methods in Science and Engineering 2007 (ICCMSE 2007)
Pages997-1000
Number of pages4
Edition2
DOIs
StatePublished - Sep 2007
EventInternational Conference on Computational Methods in Science and Engineering 2007, ICCMSE 2007 - Corfu, Greece
Duration: 25 Sep 200730 Sep 2007

Publication series

NameAIP Conference Proceedings
Number2
Volume963
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceInternational Conference on Computational Methods in Science and Engineering 2007, ICCMSE 2007
CountryGreece
CityCorfu
Period25/09/0730/09/07

Keywords

  • Bipolar transistors
  • HBT
  • High frequency
  • Impurity doping
  • Optimization
  • SiGe

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