High-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applications

Bo Yuan Chen, Kun Ming Chen, Chia Sung Chiu, Guo Wei Huang, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This paper presents the dc and high-frequency performances of laterally diffused metal-oxide-semiconductor (LDMOS) transistors with superjunction (SJ) structures. The SJ-LDMOS transistors were fabricated using a 0.5-μm CMOS process. By utilizing a modified SJ/RESURF layout (Type I) or a tapered SJ layout (Type II) in our devices, better high-frequency performances and higher breakdown voltages are achieved compared with conventional SJ counterpart, owing to the suppression of the substrate-assisted depletion effect and the reduction of the drain resistance. For Type I device with an optimal SJ layout dimension, the cutoff frequency and the breakdown voltage are 3.7GHz and 68 V, respectively. For Type II device with a smallest p-pillar width near the drain, they can be enhanced further and reach to 4.9 GHz and 83V. These experimental results suggest that the SJ-LDMOS can be used in the RF power amplifiers.

Original languageEnglish
Article number04ER09
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
StatePublished - 1 Apr 2016

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