High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

P. M. Enquist, J. A. Hutchby, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, J. A. Higgins

Research output: Contribution to journalArticle

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Abstract

Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.

Original languageEnglish
Pages (from-to)1124-1125
Number of pages2
JournalElectronics Letters
Volume25
Issue number17
DOIs
StatePublished - 3 Aug 1989

Keywords

  • Bipolar devices
  • Epitaxy
  • Semiconductor devices and materials
  • Transistors

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    Enquist, P. M., Hutchby, J. A., Chang, M-C., Asbeck, P. M., Sheng, N. H., & Higgins, J. A. (1989). High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors. Electronics Letters, 25(17), 1124-1125. https://doi.org/10.1049/el:19890755