High-frequency characteristics of PMOS transistors with raised SiGe source/drain

Kun Ming Chen, Hsiang Jen Huang, Guo Wei Huang, Tien-Sheng Chao, Yun Hao Pai, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

As the performance of small geometry CMOS improves, sub-0.1 μm Si MOSFETs have good RF characteristics, and are expected to replace bipolar and GaAs MESFETs in RF front-end ICs in the near future. However, the parasitic components will be a limiting factor as the device is scaled down to the sub-0.1 μm region. In this work, we report a p-channel MOSFET with raised Si 1-x Ge x source/drain (S/D) structure to reduce the parasitic resistance. We find that the selective epitaxial layer can effectively reduce the gate and S/D sheet resistances. In addition, due to the lower Schottky barrier height of the metal/p-Si 1-x Ge x junction, low S/D contact resistivity can be achieved. For gate length L g =0.5 μm, Si 0.86 Ge 0.14 PMOS exhibits roughly 12% f T improvement over the conventional Si PMOS. Moreover, the device with raised Si 0.86 Ge 0.14 S/D structure produces a 27% improvement in f T at a gate length of 0.2 μm. This illustrates the importance of maintaining a low series resistance as devices are scaled down.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
EditorsGeorge E. Ponchak
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages92-95
Number of pages4
ISBN (Electronic)0780371291, 9780780371293
DOIs
StatePublished - 1 Jan 2001
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 14 Sep 2001 → …

Publication series

Name2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

Conference

Conference3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
CountryUnited States
CityAnn Arbor
Period14/09/01 → …

Keywords

  • Conductivity
  • Epitaxial layers
  • Gallium arsenide
  • Geometry
  • Germanium silicon alloys
  • MESFETs
  • MOSFETs
  • Radio frequency
  • Schottky barriers
  • Silicon germanium

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