High frequency characteristics of nanoscale silicon nanowire FET

Yi-Ming Li*, Chih Hong Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar CMOS fabrication process [1,2]. In this work, we for the first time numerically explore the high frequency characteristics of the sub-45nm silicon nanowire FET. Three-dimensional (3D) density-gradient-based device transport equations directly coupling with circuit equations are simultaneously performed for calculating the property of frequency response. Our result shows that the cut-off frequency of a well-designed sub-45nm nanowire FET with 100% surrounding gate is approach to 10 THz, which substantially benefits from the nature of infinite gate in the nanowire FET. Silicon-based nanowire FET devices as active components in microwave circuits draw people's attention for their extremely rich high frequency property [3, 4]. The extensive results and analyses are presented on the promising devices for high frequency analog applications.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages193-196
Number of pages4
StatePublished - Jan 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 20 May 200724 May 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume1

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period20/05/0724/05/07

Keywords

  • 3D device simulation
  • Circuit simulation
  • High frequency characteristics
  • Mixed-mode simulation
  • Nanowire FET
  • Surrounding gate
  • VLSI devices

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