@inproceedings{1c7bb01df849464fa5b0073cc58674d2,
title = "High frequency characteristics of nanoscale silicon nanowire FET",
abstract = "Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar CMOS fabrication process [1,2]. In this work, we for the first time numerically explore the high frequency characteristics of the sub-45nm silicon nanowire FET. Three-dimensional (3D) density-gradient-based device transport equations directly coupling with circuit equations are simultaneously performed for calculating the property of frequency response. Our result shows that the cut-off frequency of a well-designed sub-45nm nanowire FET with 100% surrounding gate is approach to 10 THz, which substantially benefits from the nature of infinite gate in the nanowire FET. Silicon-based nanowire FET devices as active components in microwave circuits draw people's attention for their extremely rich high frequency property [3, 4]. The extensive results and analyses are presented on the promising devices for high frequency analog applications.",
keywords = "3D device simulation, Circuit simulation, High frequency characteristics, Mixed-mode simulation, Nanowire FET, Surrounding gate, VLSI devices",
author = "Yiming Li and Hwang, {Chih Hong}",
year = "2007",
language = "English",
isbn = "1420063421",
series = "2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings",
pages = "193--196",
booktitle = "2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings",
note = "null ; Conference date: 20-05-2007 Through 24-05-2007",
}