The evaluation of MOS compact models, focusing on BSIM3v3, is performed with specific development described toward scalable RF libraries suitable for high-frequency mixed-signal circuit design. Additional parasitic elements are added to the compact model to better describe its operation at higher frequency. This, extrinsic subcircuit includes the gate resistance and complex substrate admittance which are scalable and physically based, and a detailed parameter extraction procedure for each is described. Small-signal y-parameters and noise behavior of the extended model are used to verify the match to high-frequency on-wafer measurements.
|Number of pages||4|
|Journal||Proceedings of the Custom Integrated Circuits Conference|
|State||Published - 1 Jan 1998|
|Event||Proceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA|
Duration: 11 May 1998 → 14 May 1998