High-frequency application of MOS compact models and their development for scalable RF model libraries

D. R. Pehlke*, M. Schroter, A. Burstein, M. Matloubian, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

47 Scopus citations

Abstract

The evaluation of MOS compact models, focusing on BSIM3v3, is performed with specific development described toward scalable RF libraries suitable for high-frequency mixed-signal circuit design. Additional parasitic elements are added to the compact model to better describe its operation at higher frequency. This, extrinsic subcircuit includes the gate resistance and complex substrate admittance which are scalable and physically based, and a detailed parameter extraction procedure for each is described. Small-signal y-parameters and noise behavior of the extended model are used to verify the match to high-frequency on-wafer measurements.

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
StatePublished - 1 Jan 1998
EventProceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA
Duration: 11 May 199814 May 1998

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