High-frequency AC characteristics of 1.5 nm gate oxide MOSFETS

Hisayo Sasaki Momose*, Eiji Morifuji, Takashi Yoshitomi, Tatsuya Ohguro, Masanobu Saito, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

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