High-frequency AC characteristics of 1.5 nm gate oxide MOSFETS

Hisayo Sasaki Momose*, Eiji Morifuji, Takashi Yoshitomi, Tatsuya Ohguro, Masanobu Saito, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

76 Scopus citations


Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFETs were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 μm regime due to the high transconductance. Excellent NFmin value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 8 Dec 199611 Dec 1996

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    Momose, H. S., Morifuji, E., Yoshitomi, T., Ohguro, T., Saito, M., Morimoto, T., Katsumata, Y., & Iwai, H. (1996). High-frequency AC characteristics of 1.5 nm gate oxide MOSFETS. Technical Digest - International Electron Devices Meeting, 105-108. https://doi.org/10.1109/IEDM.1996.553132