Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFETs were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 μm regime due to the high transconductance. Excellent NFmin value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1996|
|Event||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 8 Dec 1996 → 11 Dec 1996