High frequency 0.35 μm gate length power silicon NMOSFET operating with breakdown voltage of 13 V

T. Ohguro*, M. Saito, K. Endo, M. Kakumoto, T. Yoshitomi, M. Ono, H. S. Momose, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

High frequency silicon power n-MOSFETs with 0.35 μm gate length were fabricated. The symmetrical LDD structure was adopted for its source and drain junctions. Record high fT, 8.3 GHz, and fmax, 6.0 GHz, were obtained at 3.5 V supply voltage. High breakdown voltage of 13 V was achieved concurrently due to the optimizations of the process and devices parameters. The efficiency of output power for the 900 M to approximately 2.0 GHz operation was also discussed.

Original languageEnglish
Title of host publicationIEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Pages114-118
Number of pages5
StatePublished - 1995
EventProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs - Yokohama, Jpn
Duration: 23 May 199525 May 1995

Publication series

NameIEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Conference

ConferenceProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs
CityYokohama, Jpn
Period23/05/9525/05/95

Fingerprint Dive into the research topics of 'High frequency 0.35 μm gate length power silicon NMOSFET operating with breakdown voltage of 13 V'. Together they form a unique fingerprint.

Cite this