High-field transport of hot electrons in strained Si/SiGe heterostructures

K. Miyatsuji*, Daisuke Ueda, K. Masaki, S. Yamakawa, C. Hamaguchi

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Monte Carlo simulation is carried out to investigate the high-field transport properties of the two-dimensional electron gas in strained Si/SiGe heterostructures. In the simulation we take into account the intervalley scattering between twofold and fourfold valleys of an Si well layer split by the tensile strain. Intervalley scatterings within the twofold or fourfold valleys are also incorporated in the simulation as well as the acoustic phonon scattering. We obtained an electron drift velocity at room temperature as high as 1*107 cm s-1 at 10 kV cm-1. Calculated results of 4.2 and 77 K show negative differential mobility beyond 10 kV cm-1. At 77 K the transient response of the drift velocity shows a remarkable overshoot, reaching about 3*107 cms-1 at 0.2 ps at 10 kV cm -1.

Original languageEnglish
Article number101
Pages (from-to)772-774
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
StatePublished - 1 Dec 1994

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