High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

W. B. Chen, C. H. Cheng, C. W. Lin, P. C. Chen, Albert Chin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

Original languageEnglish
Pages (from-to)64-67
Number of pages4
JournalSolid-State Electronics
Issue number1
StatePublished - 1 Jan 2011


  • EOT
  • Ge
  • High-κ dielectric
  • Mobility

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