High field hole velocity and velocity overshoot in silicon inversion layers

Dennis Sinitsky*, Fariborz Assaderaghi, Chen-Ming Hu, Jeffrey Bokor

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We report measurements of the drift velocity of holes in silicon inversion layers. The saturation velocity of holes at 300 K is found to be strongly dependent on the effective vertical field. No hole velocity overshoot was observed down to 0.16-μm channel length at room temperature. At 77 K, hole velocity saturation is much less pronounced, and a 10% higher average velocity is observed for 0.16- μm channel length as compared to 0.36-μm channel length.

Original languageEnglish
Pages (from-to)54-56
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number2
DOIs
StatePublished - 1 Feb 1997

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