High enhancement in light output of InGaN-based micro-hole array LEDs by photoelectrochemical (PEC) oxidation

Fang I. Lai*, S. G. Lin, C. E. Hsieh, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InGaN micro-hole-array LEDs (μ-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of μ-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.

Original languageEnglish
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1557528594, 9781557528599
DOIs
StatePublished - 15 Sep 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Conference

ConferenceConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
CountryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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